Applied Physics and Mathematics Annotation << Back STRUCTURE AND ELECTRICAL PROPERTIES OF FE DOPED ZnO THIN FILMS M.N. VOLOCHAEV, Yu.Ye. KALININ, M.A. KASHIRIN, V.A. MAKAGONOV, S.Yu. PANKOV, I.M. TREGUBOV, V.A. FOSHIN Fe doped ZnO thin films with a content of 2.7 to 5 at. % Fe was obtained by ion beam sputtering. According to the X-ray diffraction analysis and transmission electron microscopy results, it was found that the obtained films are monophasic and polycrystalline and are characterized by a textured phase of hexagonal ZnO with a <001> texture axis, and the degree of texturing increases with an increase in the iron content. From an analysis of the thermoelectric power and the Hall effect results, it follows that ZnO:Fe thin films with concentration of Fe changes from 2.7 to 5 at. % are semiconductors with electronic type of conductivity. The addition of iron with concentrations from 2.7 to 5 at. % leads to a nonmonotonic change in the value of electrical resistivity and thermoelectric coefficient. It is associated with a nonmonotonic dependence of the charge carrier’s mobility, determined by the degree of ZnO thin films texture and by impurity ions scattering, as well as a decrease in concentration charge carriers. DOI: 10.25791/pfim.02.2020.1153 Pp. 07-13.