Applied Physics and Mathematics Annotation << Back ELECTRICAL NOISE AND RELIABILITY OF SEMICONDUCTOR DEVICES B.I. YAKUBOVICH Possibility of using low-frequency electrical noise to improve reliability of semiconductor devices is considered. Relationship between excess low-frequency noise and degradation changes in semiconductor devices is strictly established. An expression is given that shows relationship between noise spectrum and characteristics of degradation processes. Relationship between spectral density of excess noise and rate of degradation process in semiconductor materials is established. This is a fundamental result that allows one to estimate rate of degradation changes in semiconductor devices based on noise characteristics. It is shown that electrical noise provides information not only on the quality of the manufactured device, but also contains information on the decrease in the quality and reliability of device during its operation. This can be used to significantly improve quality and reliability of semiconductor devices. Dominance of excess noise in semiconductors at low frequencies and high sensitivity of fluctuation spectroscopy allow one to measure spectral characteristics of this type of noise with good accuracy. Accordingly, low-frequency electrical noise is effective for improving quality and reliability of semiconductor devices. The results obtained in the article can be applied to improve methods of non-destructive testing and predicting the reliability of semiconductor devices. Keywords: noise, fluctuations, electrical, semiconductors, semiconductor devices, non-destructive testing, reliability. DOI: 10.25791/pfim.06.2025.1344 Pp. 13-17.