Applied Physics and Mathematics Annotation << Back Investigation of high frequency vibrations on the light emitting diodes performance characteristics O.I. Rabinovich The technique of ultrasonic influence (UI) on semiconductors such AIIIBV. An original non-destructive method for structure investigation of semiconductor materials (for example, GaP (N)) and measurement of fixed charge centers in the active region of light-emitting diode (LED) – a method of dynamic barrier capacity. The effect of ultrasonic influence on the main green GaP LEDs characteristics. It was detected that after a 15-hour ultrasonic influence a redistribution of isoelectronic nitrogen impurities (in the GaP structure), reducing the concentration of the charge centers in the active region, a significant decline in the radiative power, and shift of the spectral maximum of 4...5 nm to shorter area. A model of the mechanism of the structural changes of the material under the influence of ultrasonic and degradation of LEDs characteristics, according to which the ultrasonic vibrations created piezoelectric field in the crystal LED, which causes heating of charge carriers, which leads to the formation of point defects and the emergence of levels in the band gap of nonradiative recombination. Key words: Light emitting diodes, ultrasonics, GaN, AlGaInN. Contacts: Е-mail: rawork2008@mail.ru Pp. 31-36.