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Applied Physics and Mathematics

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Investigation of high frequency vibrations on the light emitting diodes performance characteristics
O.I. Rabinovich

The technique of ultrasonic influence (UI) on semiconductors
such AIIIBV. An original non-destructive method for structure
investigation of semiconductor materials (for example, GaP (N))
and measurement of fixed charge centers in the active region
of light-emitting diode (LED) – a method of dynamic barrier
capacity. The effect of ultrasonic influence on the main green
GaP LEDs characteristics. It was detected that after a 15-hour
ultrasonic influence a redistribution of isoelectronic nitrogen
impurities (in the GaP structure), reducing the concentration of
the charge centers in the active region, a significant decline in
the radiative power, and shift of the spectral maximum of 4...5
nm to shorter area. A model of the mechanism of the structural
changes of the material under the influence of ultrasonic and
degradation of LEDs characteristics, according to which the
ultrasonic vibrations created piezoelectric field in the crystal
LED, which causes heating of charge carriers, which leads to
the formation of point defects and the emergence of levels in
the band gap of nonradiative recombination.
Key words: Light emitting diodes, ultrasonics, GaN, AlGaInN.

Contacts: Е-mail: rawork2008@mail.ru

Pp. 31-36.

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