Applied Physics and Mathematics Annotation << Back ELECTRIC FLUCTUATIONS AND DEFECTS IN SEMICONDUCTORS B.I. YAKUBOVICH The electric fluctuations in semiconductors caused by the capture and emission of charge carriers by multiply charged traps formed by structural defects are considered. Capture and emission of carriers by traps are the cause of number of fluctuation phenomena in semiconductors. The origin of several types of electric noise of fundamental importance is associated with traps. Noises in semiconductors associated with traps are widely studied, and fluctuations caused by singly charged traps are usually considered. In semiconductors, there are often multiply charged traps that can be formed by various structural defects. In connection with this and the importance of the mechanism of fluctuations associated with traps, the electric fluctuations in semiconductors caused by multiply charged traps are analyzed. The fluctuations are considered in a very general case: trap can have an arbitrary number of charge states, statistical connections between successive events of the process of changing the charge state of the trap are given in general form. As a result, quantitative description of electric fluctuations in semiconductors caused by multiply charged traps is given. General form expression for the fluctuation spectrum is calculated. This expression gives universal description of electric fluctuations caused by multiply charged traps, and is applicable to various types of semiconductors. The results obtained broaden understanding of electric fluctuations caused by traps and complement quantitative description of such fluctuation phenomena. Keywords: fluctuations, noise, electric, defects, traps, semiconductors. DOI: 10.25791/pfim.02.2020.1152 Pp. 03-06.