Applied Physics and Mathematics Annotation << Back PHOTOLUMINESCENCE OF SEMICONDUCTOR CRYSTALS A2B6: THE CASE OF ZnSe A.A. GLADILIN This article provides a review of studies on A2B6 semiconductor crystals, focusing on ZnSe crystals. Particular attention is given to the impact of crystal lattice defects and doping impurities on photoluminescence spectra. Various mechanisms of point and extended defect formation, as well as their effects on energy levels within the bandgap, are examined. The article analyzes the features of photoluminescence spectra of ZnSe crystals doped with transition metals and halogens under different temperature conditions. It is demonstrated that doping and the presence of defects significantly influence the intensity and position of spectral lines. These findings are crucial for the development of new materials for lasers and detectors operating in the mid-infrared range. Keywords: semiconductors, defects of crystal, doping process, photoluminescence. DOI: 10.25791/pfi m.05.2024.1306 Pp. 03-11.